description: the central semiconductor CMLD6001 type contains two (2) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a picomini ? surface mount package. these devices are designed for switching applications requiring extremely low leakage. marking code: c6d maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma forward surge current, tp=1 sec. i fsm 4000 ma forward surge current, tp=1 sec. i fsm 1000 ma power dissipation p d 250 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =75v 500 pa bv r i r =100a 100 v v f i f =1.0ma 0.85 v v f i f =10ma 0.95 v v f i f =100ma 1.1 v c t v r =0, f=1 mhz 2.0 pf t rr i r =i f =10ma, r l =100 ? rec. to 1.0ma 3.0 s CMLD6001 surface mount picomini ? dual, isolated low leakage silicon switching diodes central semiconductor corp. tm r0 (3-november 2003) sot-563 case
central semiconductor corp. tm CMLD6001 surface mount picomini ? dual, isolated low leakage silicon switching diodes r0 (3-november 2003) lead code: 1) anode d1 2) nc 3) anode d2 4) cathode d2 5) nc 6) cathode d1 marking code: c6d sot-563 case - mechanical outline a b c h g f d e e r0 12 3 65 4 pin configuration
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